类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 24-CDIP (0.300", 7.62mm) |
供应商设备包: | 24-CDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7005S55GBRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PGA |
|
R1LV0816ASA-5SI#SKRochester Electronics |
SRAM 8MBIT 55NS |
|
7133SA90GRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PGA |
|
7005L35FBRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68FPACK |
|
MT29F2T08EMHBFJ4-T:BMicron Technology |
IC FLASH 2TB PARALLEL 132VBGA |
|
CAT25C08YIRochester Electronics |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
5962-3829407MZARenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28CDIP |
|
MX29F040CQC-90GMacronix |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
CY7C1021BN-15VXEKJRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
|
MT53D1024M32D4DT-046 AIT:DMicron Technology |
IC DRAM 32GBIT 2133MHZ 200VFBGA |
|
CAT93C86SE-26685Rochester Electronics |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
CY7C1327-166ACQRochester Electronics |
256K X 18 SYNCHRONOUS PIPELINED |
|
MTFC4GACAJCN-1M WT TRMicron Technology |
MODULE EMMC 4GB 153VFBGA |