English
简体中文
RES ARRAY 4 RES 820K OHM 1206
D-602-76CS114
KU4012BV DIN ENCLOSURE 32 TERM V
SPECIAL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | - |
| 内存格式: | - |
| 技术: | - |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
DS2502PU-112F+TRochester Electronics |
IEEE EUI-64 NODE ADDRESS CHIP |
|
|
CAT24C32WE-GT3Rochester Electronics |
IC EEPROM 32KBIT I2C 1MHZ 8SOIC |
|
|
EDB4432BBBJ-1D-F-DMicron Technology |
IC DRAM 4GBIT PARALLEL 134FBGA |
|
|
MT53E256M16D1DS-046 AAT:B TRMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
|
25CSM04-I/MFRoving Networks / Microchip Technology |
IC EEPROM 4MBIT SPI 8MHZ 8TDFN |
|
|
N25Q064A13ESFA0FAlliance Memory, Inc. |
IC FLSH 64MBIT SPI 108MHZ 16SOP2 |
|
|
EM6HE16EWAKG-10HEtron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
|
CG7631AARochester Electronics |
SPECIAL |
|
|
DS1230Y-X15Rochester Electronics |
3.3 VOLT, 256 K NONVOLATILE SRAM |
|
|
MT25QU02GCBB8E12-0AAT TRMicron Technology |
IC FLSH 2GBIT SPI 133MHZ 24TPBGA |
|
|
MK20DX256VLK10,557Rochester Electronics |
KINETIS K20: 100MHZ CORTEX M4 PE |
|
|
CG8295AARochester Electronics |
MICROPOWER SRAMS |
|
|
7008L20JGIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 84PLCC |