类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M10162040108X0PSAYRenesas Electronics America |
IC RAM 16MBIT 108MHZ 8SOIC |
|
M30162040054X0ISARRenesas Electronics America |
IC RAM 16MBIT SPI 54MHZ 8SOIC |
|
MT62F768M64D4EJ-031 WT:AMicron Technology |
LPDDR5 48G 768MX64 FBGA QDP |
|
EM6GA16LCAEA-12HEtron Technology |
256M BIT RPC DRAM (WLCSP) |
|
CG6876AMRochester Electronics |
SPECIAL |
|
MT40A1G16RC-062E IT:B TRMicron Technology |
IC DRAM 16GBIT PARALLEL 96FBGA |
|
MT35XU01GBBA1G12-0AUTMicron Technology |
IC FLSH 1GBIT XCCELA BUS 24TPBGA |
|
IS61WV12824-8BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 3MBIT PARALLEL 119PBGA |
|
CY7C1347G-166AXIKJRochester Electronics |
CACHE SRAM, 128KX36, 3.5NS |
|
CAT24C128WE-GT3Rochester Electronics |
IC EEPROM 128KBIT I2C 1MHZ 8SOIC |
|
M10082040054X0PSAYRenesas Electronics America |
IC RAM 8MBIT 54MHZ 8SOIC |
|
5962-88515032ARochester Electronics |
OT PLD, 50NS |
|
CG6755ATTRochester Electronics |
SPECIAL |