English
简体中文
MOSFET P-CH 100V 1A 4DIP
CORD 15AWG IEC320C20 - 320C19 4'
IC FLASH 128MBIT PARALLEL 56TSOP
IC SRAM 9MBIT PARALLEL 256CABGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Synchronous |
| 内存大小: | 9Mb (512K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.6 ns |
| 电压 - 电源: | 3.15V ~ 3.45V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 256-LBGA |
| 供应商设备包: | 256-CABGA (17x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
EM63A165TS-5IGEtron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
|
NM25C040LMT8Rochester Electronics |
EEPROM, 512X8, SERIAL, CMOS |
|
|
MT35XU02GCBA1G12-0AAT TRMicron Technology |
IC FLSH 2GBIT XCCELA BUS 24TPBGA |
|
|
S25FL256LAGBHV020YRochester Electronics |
SERIAL FLASH, 256MB |
|
|
M10082040108X0IWARRenesas Electronics America |
IC RAM 8MBIT SPI 108MHZ 8DFN |
|
|
MT46H64M32LFBQ-48 IT:CMicron Technology |
IC DRAM 2GBIT PARALLEL 90VFBGA |
|
|
MT41K2G4RKB-107:P TRMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
|
CG5624ATTRochester Electronics |
SPECIAL |
|
|
M30042040108X0PSAYRenesas Electronics America |
IC RAM 4MBIT 108MHZ 8SOIC |
|
|
S25FL512SAGBHEA10Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
|
HN58W241000FPI#S0Rochester Electronics |
SERIAL 1M EEPROM (128K X 8-BIT) |
|
|
5962-8855206UARenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28CDIP |
|
|
MT40A4G8KVA-083H:GMicron Technology |
IC DRAM 32GBIT PARALLEL 78FBGA |