类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND (SLC) |
内存大小: | 1Gb (128M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 63-VFBGA |
供应商设备包: | 63-VFBGA (9x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MD51C68-35/BRochester Electronics |
DUAL MARKED (5962-8670512RA) |
|
5962-8866206XARenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28CDIP |
|
IS25LP032D-JBLA3ISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
CAT2508OVP21GTQHRochester Electronics |
IC EEPROM 8KBIT SPI 10MHZ 8TDFN |
|
MB85RS2MTYPN-GS-AWEWE1Fujitsu Electronics America, Inc. |
IC FRAM 2MBIT SPI 50MHZ 8DFN |
|
M10162040108X0ISAYRenesas Electronics America |
IC RAM 16MBIT 108MHZ 8SOIC |
|
MTFC8GACAALT-4M ITMicron Technology |
IC FLASH 64GBIT MMC 100TBGA |
|
CAT24WC02LI-26678Rochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
71V424YL10YIRochester Electronics |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
CG7103AMRochester Electronics |
SPECIAL |
|
NM25C040LZEMT8Rochester Electronics |
EEPROM, 512X8, SERIAL, CMOS |
|
IS61LPS25636B-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |
|
71V016SA20BF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 48CABGA |