类型 | 描述 |
---|---|
系列: | NoBL™ |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 72Mb (4M x 18) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT28EW512ABA1LPN-0SIT TRMicron Technology |
IC FLSH 512MBIT PARALLEL 56VFBGA |
|
MD27C64-20/BRochester Electronics |
64K (8K X 8) EPROM |
|
MT61K256M32JE-14:A TRMicron Technology |
IC RAM 8GBIT PARALLEL 180FBGA |
|
CG7137AATRochester Electronics |
SPECIAL |
|
N93C66BT3ETAGSanyo Semiconductor/ON Semiconductor |
4KB MICROWIRE SER EEPROM |
|
IS61LF51218B-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |
|
MT40A2G16SKL-062E:BMicron Technology |
IC FLASH 32GBIT PARALLEL 96FBGA |
|
MT53D1024M32D4DT-046 AIT:D TRMicron Technology |
IC DRAM 32GBIT 2133MHZ 200VFBGA |
|
MT47H64M16NF-25E:M TRMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
EM6GD08EWAHH-10IHEtron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
LE24CB642TT-TLM-H-ONRochester Electronics |
IC EEPROM 64KBIT I2C 8MSOP |
|
70V07S55GRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PGA |
|
M10162040054X0ISARRenesas Electronics America |
IC RAM 16MBIT 54MHZ 8SOIC |