类型 | 描述 |
---|---|
系列: | FS-S |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | SPI - Quad I/O, QPI |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | 2ms |
访问时间: | - |
电压 - 电源: | 1.7V ~ 2V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-WSON (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS4C512M16D4-75BCNAlliance Memory, Inc. |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
N24S64C4DYT3GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT I2C 1MHZ 4WLCSP |
|
CG7327BTRochester Electronics |
SPECIAL |
|
CY7C027V-20ACKJRochester Electronics |
DUAL PORT RAM |
|
FM25V40-DGCRochester Electronics |
NVRAM FRAM SERIAL |
|
M10082040108X0PSAYRenesas Electronics America |
IC RAM 8MBIT 108MHZ 8SOIC |
|
CAT24C04ZGIRochester Electronics |
IC EEPROM 4KBIT I2C 400KHZ 8MSOP |
|
MT53D384M64D4KA-046 XT:E TRMicron Technology |
IC DRAM 24GBIT 2133MHZ |
|
MT52L256M64D2QB-125 XT:B TRMicron Technology |
IC DRAM LPDDR3 16G FBGA |
|
MT40A1G8SA-075:EMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
MX66L51255FXCI-10GMacronix |
IC FLASH 512MBIT |
|
S26KS512SDPBHM020Cypress Semiconductor |
IC NOR |
|
MTFC64GAKAEEY-3M WTMicron Technology |
IC FLASH 512GBIT MMC 153LFBGA |