







FUSE HLDR CART 600V 30A IN LINE
IGBT
NUCLEO BOARD L6230 MOTOR DRIVER
IC DRAM 8GBIT PARALLEL 216FBGA
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR2 |
| 内存大小: | 8Gb (128M x 64) |
| 内存接口: | Parallel |
| 时钟频率: | 533 MHz |
| 写周期时间 - 字,页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.14V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 216-WFBGA |
| 供应商设备包: | 216-FBGA (12x12) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
AS7C31026C-12BINAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 48BGA |
|
|
7133LA55GRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PGA |
|
|
MT52L512M64D4PQ-107 WT:BMicron Technology |
IC DRAM 32GBIT 933MHZ 253VFBGA |
|
|
MT53E2G32D4DT-046 AAT:AMicron Technology |
IC DRAM LPDDR4 FBGA |
|
|
ER2051I/PRochester Electronics |
512 BIT ELECTRICALLY ALTERABLE R |
|
|
MT29F4G01ABAFD12-IT:F TRMicron Technology |
IC FLASH 4GBIT SPI 24TPBGA |
|
|
MX25V1006EOI-13GMacronix |
IC FLSH 1MBIT SPI/DUAL I/O 75MHZ |
|
|
MT53E128M16D1DS-046 WT:AMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
|
M5M5256DFP-70GI#SMRochester Electronics |
STANDARD SRAM, 32KX8 |
|
|
MD8039AHL/RRochester Electronics |
MD8039AHL/R |
|
|
IS43DR16640C-3DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
|
7025L25GRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PGA |
|
|
70V3579S6BCIRenesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |