类型 | 描述 |
---|---|
系列: | - |
包裹: | Box |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR3 |
内存大小: | 8Gb (256M x 32) |
内存接口: | - |
时钟频率: | 933 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.2V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M29F800FB55M3F2 TRMicron Technology |
IC FLASH 8MBIT PARALLEL 44SO |
|
593153-001-00Cypress Semiconductor |
IC FLASH |
|
MT29E128G08CECABJ1-10Z:A TRMicron Technology |
IC FLASH 128GBIT PARALLEL 100MHZ |
|
CG8278AATCypress Semiconductor |
IC MEMORY F-RAM SER 8SOIC |
|
24AA04-I/S16KRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ DIE |
|
MT28EW01GABA1HPC-1SIT TRMicron Technology |
IC FLASH 1GBIT PARALLEL 64LBGA |
|
EDF8132A3PK-GD-F-R TRMicron Technology |
IC DRAM 8GBIT PAR 800MHZ FBGA |
|
S99FL132K0XMFI011Cypress Semiconductor |
IC FLASH NOR |
|
70261S55PFI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
MT29C8G96MAZBADJV-5 WTMicron Technology |
IC FLASH RAM 8GBIT PAR 168VFBGA |
|
M27C4001-70C1STMicroelectronics |
IC EPROM 4MBIT PARALLEL 32PLCC |
|
MTFC4GACAAEA-WTMicron Technology |
IC FLASH 32GBIT MMC WFBGA |
|
EDFA112A2PF-JD-F-DMicron Technology |
IC DRAM 16GBIT PARALLEL 933MHZ |