







XTAL OSC VCXO 216.0000MHZ HCSL
MOSFET P-CH 40V 120A TO263
CONN HEADER R/A 26POS 1.27MM
IC DRAM 24GBIT 1600MHZ 366WFBGA
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR4 |
| 内存大小: | 24Gb (384M x 64) |
| 内存接口: | - |
| 时钟频率: | 1.6 GHz |
| 写周期时间 - 字,页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.1V |
| 工作温度: | -30°C ~ 105°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 366-WFBGA |
| 供应商设备包: | 366-WFBGA (15x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
W972GG8JB-25 TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |
|
|
IS43LR32320B-5BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 90LFBGA |
|
|
93AA76C/WF15KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ DIE |
|
|
70V28VL20PF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
|
70P259L65BYGIRenesas Electronics America |
IC SRAM 128KBIT PAR 100CABGA |
|
|
MT29F64G08CBEFBL94C3WC1Micron Technology |
IC FLASH 64GBIT PARALLEL WAFER |
|
|
M29F400FT5AM6T2 TRMicron Technology |
IC FLASH 4MBIT PARALLEL 44SO |
|
|
MT29F1T08CUCCBH8-6ITR:CMicron Technology |
IC FLASH 1TB PARALLEL 152LBGA |
|
|
7132SA25J8/CRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
|
N25Q032A13EV7A0Micron Technology |
IC FLASH 32MBIT SPI 108MHZ DIE |
|
|
MT35XU01GBBA2G12-0SIT TRMicron Technology |
IC FLSH 1GBIT XCCELA BUS 24TPBGA |
|
|
PC28F128M29EWHGMicron Technology |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
|
MT53D512M64D4NW-046 WT:DMicron Technology |
IC DRAM 32GBIT 2133MHZ 432VFBGA |