English
简体中文
XTAL OSC VCXO 148.5000MHZ LVPECL
1/4 OD X 4.00 LG X 1-1/4 HT
SENSOR 200PSIS 1.2 UNF 5V 12"
IC SRAM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 内存类型: | - |
| 内存格式: | - |
| 技术: | - |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MTFC16GJDEC-4M IT TRMicron Technology |
IC FLASH 128GBIT MMC 169WFBGA |
|
|
MT53D1G64D8SQ-053 WT ES:E TRMicron Technology |
IC DRAM 64GBIT 1866MHZ 556VFBGA |
|
|
MTFC64GAPAKEA-WT TRMicron Technology |
IC FLASH 512GBIT MMC 153WFBGA |
|
|
MTFC64GAPAKEA-WT ESMicron Technology |
IC FLASH 512GBIT MMC 153WFBGA |
|
|
MT42L32M16D1U67MWC2Micron Technology |
LPDDR2 |
|
|
W978H6KBQX2EWinbond Electronics Corporation |
IC DRAM 256MBIT PAR 168WFBGA |
|
|
MT29C8G96MAYAPDJA-5 ITMicron Technology |
IC FLASH RAM 8GBIT PAR 200MHZ |
|
|
MT61M256M32JE-12 AAT:AMicron Technology |
IC RAM 8GBIT PARALLEL 180FBGA |
|
|
71342SA25JI8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
|
MT29VZZZBD8HQOWL-053 W.G8DMicron Technology |
ALL IN ONE MCP 5600G |
|
|
THGBMHG8C4LBAIRToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH MEM MMC 169VFBGA |
|
|
MT47H512M4EB-187E:CMicron Technology |
IC DRAM 2GBIT PARALLEL 60FBGA |
|
|
USBMISCCypress Semiconductor |
INTERFACE USB MISC |