类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8, 1K x 16) |
内存接口: | SPI |
时钟频率: | 3 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | Die |
供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S99GL064N0110Cypress Semiconductor |
IC FLASH |
|
MT53D512M64D4NW-062 WT:DMicron Technology |
IC DRAM 32GBIT 1600MHZ 432VFBGA |
|
MT53B256M32D1NP-062 AAT:C TRMicron Technology |
IC DRAM 8GBIT 1600MHZ 200WFBGA |
|
CAT28C512HI12Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT PAR 32TSOP |
|
DS2502U-1174/INDX+Maxim Integrated |
IC INTEGRATED CIRCUIT |
|
EDFP112A3PB-JDTJ-F-R TRMicron Technology |
IC DRAM 24GBIT PARALLEL 933MHZ |
|
CG8614AACypress Semiconductor |
IC USB PERIPHERAL FULL SPEED |
|
MT29F1T08CUCCBH8-6C:CMicron Technology |
IC FLASH 1TB PARALLEL 152LBGA |
|
MT46V128M4P-5B:J TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
7025L35PFI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
40060641SkyHigh Memory Limited |
IC MEMORY FLASH NAND 48-TSOP |
|
MT42L64M32D1LF-18 IT:C TRMicron Technology |
IC DRAM 2GBIT PARALLEL 168FBGA |
|
M27C2001-70C1STMicroelectronics |
IC EPROM 2MBIT PARALLEL 32PLCC |