类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (4M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFBGA |
供应商设备包: | 48-TFBGA (6.39x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25LC512-I/S16KRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 20MHZ DIE |
|
MT41K128M16JT-107:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
MT46H64M32L2JG-6 IT:A TRMicron Technology |
IC DRAM 2GBIT PARALLEL 168VFBGA |
|
NAND512W3A2SZAXEMicron Technology |
IC FLSH 512MBIT PARALLEL 63VFBGA |
|
MT29C4G48MAAGBBAKS-48 ITMicron Technology |
IC FLASH LPDRAM 137VFBGA |
|
7025S35JI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
25AA640/WFRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 1MHZ DIE |
|
70P264L40BYGI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 81CABGA |
|
7007S25JRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
|
MTFC64GJVDN-3M WTMicron Technology |
IC FLASH 512GBIT MMC 169LFBGA |
|
IS42S83200J-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
MTFC32GJTED-ITMicron Technology |
IC FLASH 256GBIT MMC 169VFBGA |
|
93C76C-I/S15KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ DIE |