SMA-SP/TNC-SJB G174 24I
ADJ LEVER ZINC DIE-CAST, STEEL
DC DC CONVERTER 24V 100W
MT53D512M64D4NW-053 WT ES:E TR
IC DRAM 32GBIT 1866MHZ 432VFBGA
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 32Gb (512M x 64) |
内存接口: | - |
时钟频率: | 1.866 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 432-VFBGA |
供应商设备包: | 432-VFBGA (15x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53B256M64D2NK-053 WT ES:C TRMicron Technology |
IC DRAM 16GBIT 1866MHZ FBGA |
|
MT29F128G08CFABAWP:BMicron Technology |
IC FLASH 128GBIT PARALLEL 48TSOP |
|
M36L0R7050L3ZSF TRMicron Technology |
IC FLASH PSRAM 160M |
|
EDFP112A3PB-GD-F-DMicron Technology |
IC DRAM 24GBIT PARALLEL 800MHZ |
|
CG7762AATCypress Semiconductor |
MICROPOWER SRAMS |
|
CG8317AATCypress Semiconductor |
IC SRAM MICROPOWER 32SOIC |
|
CG8371AATCypress Semiconductor |
IC SRAM |
|
MTFC32GJVED-4M ITMicron Technology |
IC FLASH 256GBIT MMC 169VFBGA |
|
MT29F16G08AJADAWP:DMicron Technology |
IC FLASH 16GBIT PARALLEL 48TSOP |
|
MT29F512G08CMCCBH7-6ITR:C TRMicron Technology |
IC FLASH 512GBIT PAR 152TBGA |
|
MT49H16M36BM-33:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
CG8268AATCypress Semiconductor |
IC SRAM |
|
SM662PX4-ACHSilicon Motion |
FERRI-EMMC BGA 153-B EMMC 5.0 ML |