类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 128Kb (16K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 68-LCC (J-Lead) |
供应商设备包: | 68-PLCC (24.21x24.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY14E064L-SZ45XCCypress Semiconductor |
IC NVSRAM 64KBIT PARALLEL 28SOIC |
|
MT29C8G96MAYBADJV-5 WTMicron Technology |
IC FLASH RAM 8GBIT PAR 168VFBGA |
|
MX25U25635FZ4I-08GMacronix |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
MTFC128GAOANAM-WT TRMicron Technology |
MASSFLASH/CONTROLLER 1T |
|
CG8633AATCypress Semiconductor |
MICROPOWER SRAMS |
|
CG8619AMCypress Semiconductor |
IC MEM F-RAM SERIAL 8DFN |
|
MT46H32M32LFCG-6 IT:A TRMicron Technology |
IC DRAM 1GBIT PARALLEL 152VFBGA |
|
CG8194AATCypress Semiconductor |
IC SRAM SYNC |
|
M29W640GH70ZS6EMicron Technology |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
MT53B512M64D4NZ-062 WT:DMicron Technology |
IC DRAM 32GBIT 1600MHZ |
|
M29W640FB70ZA6F TRMicron Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
MT52L256M32D1PH-107 WT ES:B TRMicron Technology |
IC DRAM 8GBIT 933MHZ FBGA |
|
EN-20 256GB I-GRADESwissbit |
IND BGA PCIE SSD EN-20 (1620) 25 |