类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR |
内存大小: | 8Gb (256M x 32) |
内存接口: | Parallel |
时钟频率: | 208 MHz |
写周期时间 - 字,页: | 14.4ns |
访问时间: | 5 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -25°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 168-TFBGA |
供应商设备包: | 168-TFBGA (12x12) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M24128S-FCU6T/TFSTMicroelectronics |
IC EEPROM 128KBIT I2C 4WLCSP |
|
CG8368AACypress Semiconductor |
IC FRAM MEMORY SERIAL 8SOIC |
|
S98WS512N0GFW0130GCypress Semiconductor |
IC MEMORY NOR |
|
CG7838AATCypress Semiconductor |
IC SRAM ASYNC 48TSOP I |
|
IS43TR85120A-093NBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
MT29F4G01ABAFD12-ITES:F TRMicron Technology |
IC FLASH 4GBIT SPI 24TBGA |
|
M29W256GH7AN6EMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
7015S25J8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 68PLCC |
|
MT29C8G96MAAFBACKD-5 WTMicron Technology |
IC FLASH RAM 8GBIT PAR 200MHZ |
|
R1WV6416RBG-5SI#B0Renesas Electronics America |
IC SRAM 64MBIT PARALLEL 48TFBGA |
|
MT29F16G08ADACAH4:CMicron Technology |
IC FLASH 16GBIT PARALLEL 63VFBGA |
|
MTFC16GJVEC-2F WTMicron Technology |
IC FLASH 128GBIT MMC 169WFBGA |
|
EDFA164A2PM-JD-F-R TRMicron Technology |
IC DRAM 16GBIT PARALLEL 933MHZ |