类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (1K x 8) |
内存接口: | Single Wire |
时钟频率: | 100 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | Die |
供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MTFC4GLGDQ-AIT ZMicron Technology |
IC FLASH 32GBIT MMC 100LBGA |
|
M27W201-80K6STMicroelectronics |
IC EPROM 2MBIT PARALLEL 32PLCC |
|
MT47H256M4CF-25E:H TRMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
MT41J256M16HA-093G:EMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
EDFP112A3PB-GD-F-D TRMicron Technology |
IC DRAM 24GBIT PARALLEL 800MHZ |
|
MT53D768M64D8SQ-053 WT ES:E TRMicron Technology |
IC DRAM 48GBIT 1866MHZ 556VFBGA |
|
CG8704AFTCypress Semiconductor |
IC SOC WI-FI WICED |
|
IS43R32800D-5BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 144LFBGA |
|
N25Q064A13ESEH0EMicron Technology |
IC FLASH 64MBIT SPI 108MHZ 8SO W |
|
MT29F128G08CBCABL85A3WC1Micron Technology |
IC FLASH 128GBIT PARALLEL WAFER |
|
71421LA35JI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
S99GL064N0140Cypress Semiconductor |
IC FLASH |
|
MT53B512M64D4NK-053 WT ES:CMicron Technology |
IC DRAM 32GBIT 1866MHZ 366WFBGA |