English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LQFP |
| 供应商设备包: | 64-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29WS256N0SBFW012Cypress Semiconductor |
IC MEMORY NOR |
|
|
W972GG8JB-3I TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |
|
|
MT42L128M32D1GU-18 WT:AMicron Technology |
IC DRAM 4GBIT PARALLEL 134FBGA |
|
|
70V05L55J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
|
MTFC16GAPALNA-AAT ESMicron Technology |
EMMC 128G MMC5.1 J56X AAT |
|
|
MT29F16G08ABABAM62B3WC1Micron Technology |
IC FLASH 16GBIT PARALLEL DIE |
|
|
MT53E128M16D1DS-053 AIT:A TRMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
|
2385264Cypress Semiconductor |
IC GATE NOR |
|
|
W632GU8AB-11Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 933MHZ |
|
|
MTFC16GAKAECN-2M WTMicron Technology |
IC FLASH 128GBIT MMC 153VFBGA |
|
|
V29CD016J0JQFM110Cypress Semiconductor |
IC GATE NOR |
|
|
MT41K64M16JT-15E:GMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
|
PC48F4400P0VB0EF TRFlip Electronics |
IC FLASH 512MBIT PAR 64EASYBGA |
