English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR2 |
| 内存大小: | 4Gb (256M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 533 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.14V ~ 1.3V |
| 工作温度: | -30°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 134-WFBGA |
| 供应商设备包: | 134-FBGA (10x11.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CG7501AACypress Semiconductor |
IC SRAM NON VOLATILE 48FBGA |
|
|
MT29F32G08CBACAL73A3WC1PVMicron Technology |
IC FLASH 32GBIT PARALLEL |
|
|
627554400ACypress Semiconductor |
IC GATE NOR |
|
|
7024S55PF/CRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
|
7016S20JRenesas Electronics America |
IC SRAM 144K PARALLEL 68PLCC |
|
|
NM27LV010T250Sanyo Semiconductor/ON Semiconductor |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
|
MT42L128M64D2MP-25 WT:A TRMicron Technology |
IC DRAM 8GBIT PARALLEL 220FBGA |
|
|
EDW2032BBBG-50-F-DMicron Technology |
IC RAM 2GBIT PARALLEL 170FBGA |
|
|
MT53B512M64D4NK-053 WT:CMicron Technology |
IC DRAM 32GBIT 1866MHZ 366WFBGA |
|
|
M27C4002-10F1STMicroelectronics |
IC EPROM 4MBIT PARALLEL 40CDIP |
|
|
MT29RZ4B2DZZHHTB-18I.80F TRMicron Technology |
IC FLASH RAM 4GBIT PAR 162VFBGA |
|
|
AT28C040-20BCRoving Networks / Microchip Technology |
IC EEPROM 4MBIT PARALLEL 32CDIP |
|
|
CG8279AATCypress Semiconductor |
IC MEMORY F-RAM SER 8SOIC |
