English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 16Kb (1K x 16) |
| 内存接口: | SPI |
| 时钟频率: | 5 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-LSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-SSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
EDW4032BABG-50-F-DMicron Technology |
IC RAM 4GBIT PARALLEL 170FBGA |
|
|
CG7969AATCypress Semiconductor |
IC CLOCK PROGRAMMABLE |
|
|
7005S35J/2594Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
|
MT47H256M8EB-3:CMicron Technology |
IC DRAM 2GBIT PARALLEL 60FBGA |
|
|
MT49H16M36BM-33:B TRMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
|
IS46TR85120A-125KBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
|
IS61NLF25672-6.5B1-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 209LFBGA |
|
|
EDFA232A2PD-GD-F-R TRMicron Technology |
IC DRAM 16GBIT PARALLEL 800MHZ |
|
|
MT53B4DBNQ-DCMicron Technology |
IC DRAM 24GBIT 200VFBGA |
|
|
MT46H256M32L4JV-5 WT:BMicron Technology |
IC DRAM 8GBIT PARALLEL 168VFBGA |
|
|
7007L25J8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
|
|
M29F400FB55M3F2 TRMicron Technology |
IC FLASH 4MBIT PARALLEL 44SO |
|
|
MT47H128M8CF-187E:H TRMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
