English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8, 128 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 3 MHz |
| 写周期时间 - 字，页: | 6ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | Die |
| 供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
EDFP112A3PF-GDTJ-F-DMicron Technology |
IC DRAM 24GBIT PARALLEL 800MHZ |
|
|
MT29AZ2B2BHGTN-18IT.110 TRMicron Technology |
IC FLASH RAM 1G PARALLEL |
|
|
DS28E11P+TMaxim Integrated |
1-W 256B EEPROM W/SHA-256 TSOC T |
|
|
S99PL127J0100Cypress Semiconductor |
IC FLASH MEM NOR 56TSOPI |
|
|
7005L55JRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
|
93LC86C/WF15KRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ DIE |
|
|
S99GL128P11TFI010Cypress Semiconductor |
IC GATE NOR |
|
|
X28HC256WC6721Intersil (Renesas Electronics America) |
IC EEPROM 256KBIT PARALLEL |
|
|
CG7911AMCypress Semiconductor |
IC SRAM MICROPOWER |
|
|
LE25W48AMC-AHSanyo Semiconductor/ON Semiconductor |
IC FLASH MEM 4MBIT SERIAL SMD |
|
|
47C16-I/WF16KRoving Networks / Microchip Technology |
IC EERAM 16KBIT I2C 1MHZ DIE |
|
|
CG8303AACypress Semiconductor |
IC SRAM MICROPOWER 44TSOP II |
|
|
CG8232AACypress Semiconductor |
IC SRAM MICROPOWER |
