类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 128Kb (8K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 84-LCC (J-Lead) |
供应商设备包: | 84-PLCC (29.21x29.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT35XL512ABA1G12-0AAT TRMicron Technology |
IC FLASH 512MBIT XCCELA 24TPBGA |
|
MT29F256G08EBHAFJ4-3RES:AMicron Technology |
IC FLASH 256GBIT PARALLEL 333MHZ |
|
S99PL127J0140Cypress Semiconductor |
IC FLASH |
|
70V07S25J8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
|
CG8690AACypress Semiconductor |
IC SRAM NON VOLATILE 44TSOP |
|
MT29F512G08EMCBBJ5-10:BMicron Technology |
IC FLASH 512GBIT PARALLEL 100MHZ |
|
MT53B256M64D2NK-062 WT ES:CMicron Technology |
IC DRAM 16GBIT 1600MHZ FBGA |
|
MT53B2DANL-DCMicron Technology |
LPDDR4 16G 256MX64 FBGA DDP |
|
CG8082AMCypress Semiconductor |
IC USB PERIPHERAL HIGH SPEED |
|
MT46H64M16LFBF-5 AAT:BMicron Technology |
IC DRAM 1GBIT PARALLEL 60VFBGA |
|
MT29F128G08AKCABH2-10:A TRMicron Technology |
IC FLASH 128GBIT PAR 100TBGA |
|
MT29F8G16ABACAH4-IT:C TRMicron Technology |
IC FLASH 8GBIT PARALLEL 63VFBGA |
|
QMP29GL01GP12FAI020Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |