类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FRAM |
技术: | FRAM (Ferroelectric RAM) |
内存大小: | 4Mb (256K x 16) |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | 150ns |
访问时间: | - |
电压 - 电源: | 1.8V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
N25Q064A13EW7D0F TRMicron Technology |
IC FLSH 64MBIT SPI 108MHZ 8WPDFN |
|
MT41J256M8HX-15E:DMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
PC28F064M29EWHXMicron Technology |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
MTFC4GLGDQ-AIT TRMicron Technology |
IC FLASH 32GBIT MMC 100LBGA |
|
AT49BV322AT-70CIRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48CBGA |
|
7005S17JIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
MT4A1G8SA-75:EMicron Technology |
IC SDRAM 8G 1GX8 DDR4 FBGA |
|
THGBMGG9U4LBAIRToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 512G MMC 153FBGA |
|
MTFC128GAOANEA-WTMicron Technology |
IC FLASH 1TB MMC |
|
QMP25FL008A0LMFI001Cypress Semiconductor |
IC MEMORY NOR |
|
PF48F4400P0VBQ2F TRMicron Technology |
IC FLASH 512MBIT PARALLEL 88SCSP |
|
S99ML04G10042SkyHigh Memory Limited |
IC GATE NAND |
|
553395-001-00Cypress Semiconductor |
IC FLASH NOR 128MB 8SOIC |