类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.6 ns |
电压 - 电源: | 2.4V ~ 2.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 208-BFQFP |
供应商设备包: | 208-PQFP (28x28) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
40-1036-01Cypress Semiconductor |
IC FLASH |
|
EDF8164A3MA-GD-F-DMicron Technology |
IC DRAM 8GBIT PARALLEL 253FBGA |
|
7024S55PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
MT49H16M18BM-18:BMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
MT28FW01GABA1LJS-0AATMicron Technology |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
7132LA70JIRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
CG8310AATCypress Semiconductor |
IC SRAM MICROPOWER 28TSOP I |
|
MT53D1024M32D4NQ-046 WT:D TRMicron Technology |
IC DRAM 32GBIT 2133MHZ 200VFBGA |
|
EDFA232A2PD-GD-F-DMicron Technology |
IC DRAM 16GBIT PARALLEL 800MHZ |
|
MT42L256M64D4LM-25 WT:A TRMicron Technology |
IC DRAM 16GBIT PARALLEL 216FBGA |
|
MTFC16GJUEF-AITMicron Technology |
IC FLASH 128GBIT MMC 169TFBGA |
|
25LC160B-I/W15KRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ DIE |
|
MT53B512M32D2NP-053 WT:C TRMicron Technology |
IC DRAM 16GBIT 1866MHZ 200WFBGA |