类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Last Time Buy |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 128Kb (16K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
M50FLW040AK5GMicron Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
![]() |
P770011CF9C006Cypress Semiconductor |
IC FLASH MEM NOR |
![]() |
MT53D512M64D4NW-062 WT:D TRMicron Technology |
IC DRAM 32GBIT 1600MHZ 432VFBGA |
![]() |
AT25HP512W210SU2.7Roving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 16SOIC |
![]() |
S29GL064SSEI049Cypress Semiconductor |
IC FLASH 64MB FLASH NOR DIE |
![]() |
70V9359L12PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
![]() |
MT47H128M16RT-187E:C TRMicron Technology |
IC DRAM 2GBIT PARALLEL 84FBGA |
![]() |
MT29RZ4C8DZZMHAN-18W.80Y TRMicron Technology |
IC FLASH RAM 4GBIT PAR 533MHZ |
![]() |
MTFC64GJTDN-4M ITMicron Technology |
IC FLASH 512GBIT MMC 169LFBGA |
![]() |
AK6506CTUAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 8KB SER SPI 8WLCSP |
![]() |
70V28L25PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
![]() |
IS61QDPB42M36A1-550M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
![]() |
MT53D4D1ABP-DCMicron Technology |
LPDDR4 8G X64 UFBGA |