English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND (MLC) |
| 内存大小: | 256Gb (32G x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 100 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT42L32M16D1FE-25 IT:A TRMicron Technology |
IC DRAM 512MBIT PARALLEL 121FBGA |
|
|
MT29F1T08CUCBBH8-6ITR:BMicron Technology |
IC FLASH 1TB PARALLEL 152LBGA |
|
|
7143SA25JIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
|
IS62WV5128EALL-55T2LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
|
MT53D2048M32D8QD-062 WT:D TRMicron Technology |
IC DRAM 64GBIT 1600MHZ |
|
|
MT46H256M32L4SA-48 WT:C TRMicron Technology |
IC DRAM 8GBIT PARALLEL 168TFBGA |
|
|
M29W040B70N6EMicron Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
|
MT29RZ4B2DZZHGSK-18 W.80EMicron Technology |
IC FLASH RAM 4GBIT PAR 162VFBGA |
|
|
CG7975AACypress Semiconductor |
SYNC SRAMS |
|
|
709389L12PFI8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
|
N25Q256A81ESF40F TRMicron Technology |
IC FLASH 256MBIT SPI 16SOP2 |
|
|
IS43R16320D-6BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
|
S99-50480Cypress Semiconductor |
IC NOR |
