类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100, GL-S |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8, 4M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 90 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-VFBGA |
供应商设备包: | 48-FBGA (8.15x6.15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53B2DATG-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
S99GL128P11TFI020Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
M29DW323DB70ZE6F TRMicron Technology |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
AK6417ALAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 16KB SCI LQFP |
|
MT53D1G64D8NW-053 WT ES:EMicron Technology |
LPDDR4 64G 1GX64 FBGA 8DP |
|
S99GL512S11DHA020Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
EDF8132A3PB-JD-F-DMicron Technology |
IC DRAM 8GBIT PARALLEL 216FBGA |
|
MT49H8M36BM-5:BMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
MT53D1024M32D4NQ-046 WT:DMicron Technology |
IC DRAM 32GBIT 2133MHZ 200VFBGA |
|
MT41K128M8JP-125:G TRMicron Technology |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
24AA08/WF15KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ DIE |
|
PF48F4000P0ZBQE3Micron Technology |
IC FLASH 256MBIT PARALLEL 88SCSP |
|
M50FLW040BK5GMicron Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |