English
简体中文
CAP CER 1800PF 100V NP0 1812
XTAL OSC XO 983.0400MHZ LVDS SMD
MT53B256M64D2NV-062 XT ES:C TR
IC DRAM 16GBIT 1600MHZ FBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR4 |
| 内存大小: | 16Gb (256M x 64) |
| 内存接口: | - |
| 时钟频率: | 1.6 GHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.1V |
| 工作温度: | -30°C ~ 105°C (TC) |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IS41C16100D-50KLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
|
MT42L64M64D2LL-18 IT:CMicron Technology |
IC DRAM 4GBIT PARALLEL 216FBGA |
|
|
70V24S35PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
|
MT29F4G01ABBFDWB-ITES:F TRMicron Technology |
IC FLASH 4GBIT SPI 8UPDFN |
|
|
M29F040B90N1T TRMicron Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
|
CG8232AATCypress Semiconductor |
IC SRAM MICROPOWER |
|
|
S99-50340Cypress Semiconductor |
IC GATE NOR |
|
|
47C04-I/S16KRoving Networks / Microchip Technology |
IC EERAM 4KBIT I2C 1MHZ DIE |
|
|
M27C1001-35C6STMicroelectronics |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
|
MT47H64M16U88BWC1Micron Technology |
DDR2 1G DIE 64MX16 |
|
|
93C46B-I/S15KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ DIE |
|
|
MT29F512G08CMCABH7-6:AMicron Technology |
IC FLASH 512GBIT PAR 152TBGA |
|
|
MT49H16M18CBM-25:B TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |