类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 550 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 6-XFBGA, WLCSP |
供应商设备包: | 6-WLCSP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT41K512M4DA-125:MMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
MT29PZZZ8D4WKFEW-18 W.6D4Micron Technology |
IC FLASH 72G SLC DDR |
|
S29GL512N10TFA023Cypress Semiconductor |
IC FLASH MEMORY NOR PARALLEL |
|
MT41K512M4DA-125:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
70P254L55BYGI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 81CABGA |
|
CG8733AFCypress Semiconductor |
IC BT BLE IEEE 802.15.4 |
|
MT29F512G08CMCABH7-6:A TRMicron Technology |
IC FLASH 512GBIT PAR 152TBGA |
|
7007L25PFI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |
|
MT53B384M64D4NK-062 WT ES:B TRMicron Technology |
IC DRAM 24GBIT 1600MHZ 366WFBGA |
|
CG8065AACypress Semiconductor |
IC SRAM SYNC 100TQFP |
|
CG8096AATCypress Semiconductor |
IC SRAM SYNC 100TQFP |
|
IS61NLF25672-6.5B1IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 209LFBGA |
|
MT41K256M16HA-125 M:E TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |