English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Synchronous |
| 内存大小: | 512Kb (32K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 12 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MX29F200CBMC-70GMacronix |
IC FLASH 2MBIT PARALLEL 44SOP |
|
|
IDT70825S35GRenesas Electronics America |
IC RAM 128KBIT PARALLEL 84PGA |
|
|
MT49H8M36BM-33:B TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
|
25AA080A-I/S15KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ DIE |
|
|
7015L17J8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 68PLCC |
|
|
MT29F1T208EGHBBG1-3RES:B TRMicron Technology |
IC FLASH 1.125T PARALLEL 272VBGA |
|
|
MTFC256GBAOANAM-WT ES TRMicron Technology |
IC FLASH 2TB MMC |
|
|
AK93C65CUAAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 4KBIT SPI 4MHZ |
|
|
MT29F128G08CFABAWP:B TRMicron Technology |
IC FLASH 128GBIT PARALLEL 48TSOP |
|
|
V29CD016J0MDGH017Cypress Semiconductor |
IC GATE NOR |
|
|
MT29C8G96MAZBADJV-5 ITMicron Technology |
IC FLASH RAM 8GBIT PAR 168VFBGA |
|
|
MT47H128M4SH-25E:HMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
|
7007L35J8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
