RES 287K OHM 1% 1/5W 0805
CAP CER 1000PF 10V C0G/NP0 1206
IC FLASH 512GBIT MMC 153TFBGA
EXTERNAL BATTERY PACK, CONSISTIN
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 512Gb (64G x 8) |
内存接口: | MMC |
时钟频率: | 52 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 153-TFBGA |
供应商设备包: | 153-TFBGA (11.5x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
S34SL01G200BHV000SkyHigh Memory Limited |
IC FLASH 1G PARALLEL |
![]() |
S4013001200B4S020Cypress Semiconductor |
IC MEMORY NOR |
![]() |
MT40A1G16HBA-083E:A TRMicron Technology |
IC DRAM 16GBIT PARALLEL 96FBGA |
![]() |
70V06S20J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
![]() |
MT53B384M64D4NK-053 WT ES:B TRMicron Technology |
IC DRAM 24GBIT 1866MHZ 366WFBGA |
![]() |
S98WS512N0GFW0130Cypress Semiconductor |
IC MEMORY NOR |
![]() |
MT48LC16M16A2B4-7E:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
![]() |
S99-50284Cypress Semiconductor |
IC GATE NOR |
![]() |
71421LA55JIRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
![]() |
MT42L128M32D1GU-18 WT:A TRMicron Technology |
IC DRAM 4GBIT PARALLEL 134FBGA |
![]() |
MT53D4DCNZ-DC TRMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
![]() |
MT53E1G32D4NQ-046 WT:EMicron Technology |
LPDDR4 32G 1GX32 FBGA WT QDP |
![]() |
MT29F128G08EBEBBB95A3WC1-MMicron Technology |
IC FLASH 128GBIT PARALLEL |