类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 24Gb (384M x 64) |
内存接口: | - |
时钟频率: | 2.133 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -30°C ~ 105°C (TC) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
MT46H16M32LFT67M-N1003Micron Technology |
IC SDRAM MOBILE DDR 512M |
![]() |
MTFC32GAKAECN-5M AITMicron Technology |
IC FLASH 256GBIT MMC 153VFBGA |
![]() |
M29F800DB70M1Micron Technology |
IC FLASH 8MBIT PARALLEL 44SO |
![]() |
71321SA55PFIRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
![]() |
70V06S55J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
![]() |
16-3636-01Cypress Semiconductor |
IC GATE NOR |
![]() |
7133LA20JRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
![]() |
DS28E11P+Maxim Integrated |
1-W 256B EEPROM W/SHA-256 TSOC |
![]() |
MT29F256G08AUCABH3-10:AMicron Technology |
IC FLASH 256GBIT PAR 100LBGA |
![]() |
S99GL01GS0050Cypress Semiconductor |
IC FLASH |
![]() |
CG8170AATCypress Semiconductor |
IC PSOC1 |
![]() |
MT46V32M8P-5B IT:M TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
![]() |
MT29C8G96MAZBADKD-5 WTMicron Technology |
IC FLASH RAM 8GBIT PAR 168VFBGA |