English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 70 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (11.35x13.89) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S71PL032J40BAW0K0Cypress Semiconductor |
IC FLASH MEMORY SMD |
|
|
DS3645BMaxim Integrated |
IC 49CSBGA |
|
|
MT41K2G4TRF-125:E TRMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
|
PC28F512P30EFBMicron Technology |
IC FLASH 512MBIT PAR 64EASYBGA |
|
|
AT49BV320T-90UIRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 46UBGA |
|
|
MT29AZ2B2BHGTN-18IT.110Micron Technology |
IC FLASH RAM 1G PARALLEL |
|
|
MT29F8G08ADADAH4:D TRMicron Technology |
IC FLASH 8GBIT PARALLEL 63VFBGA |
|
|
MT47H128M8SH-187E:MMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
|
LE25S81MCS00TWGSanyo Semiconductor/ON Semiconductor |
IC FLASH MEM 8MBIT SERIAL 8SOIC |
|
|
S99PL064J0060Cypress Semiconductor |
IC FLASH |
|
|
EDFA232A2PB-GD-F-DMicron Technology |
IC DRAM 16GBIT PARALLEL 216FBGA |
|
|
MT53D768M32D2DS-046 WT ES:A TRMicron Technology |
LPDDR4 24G 768MX32 FBGA DDP |
|
|
MT29TZZZAD8DKKBT-107 W.9F8 TRMicron Technology |
MLC EMMC/LPDDR3 544G |
