类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 32Kb (2K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 68-LCC (J-Lead) |
供应商设备包: | 68-PLCC (24.21x24.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT70824L20GRenesas Electronics America |
IC RAM 64KBIT PARALLEL 84PGA |
|
MT53D1024M32D4NQ-062 WT:D TRMicron Technology |
IC DRAM 32GBIT 1600MHZ 200VFBGA |
|
CG8214AACypress Semiconductor |
IC SRAM |
|
S99-50416Cypress Semiconductor |
IC FLASH |
|
7024S35JI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
P770012CF8C000Cypress Semiconductor |
IC MEMORY |
|
MT48LC16M8A2BB-6A AAT:LMicron Technology |
IC DRAM 128MBIT PARALLEL 60FBGA |
|
DK307511Cypress Semiconductor |
IC GATE NOR |
|
7025S35PFI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
MT48LC4M16A2B4-7E:J TRMicron Technology |
IC DRAM 64MBIT PARALLEL 54VFBGA |
|
MT29F4G01ADAGDSF-IT:GMicron Technology |
IC FLASH 4GBIT SPI 16SO |
|
CY44C027PW-G-ERE1Cypress Semiconductor |
IC MCD AUTO ANALOG |
|
S99GL016ACypress Semiconductor |
IC MEMORY NOR |