English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | - |
| 内存格式: | - |
| 技术: | - |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
24AA04-I/WF16KRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ DIE |
|
|
MT40A512M8RH-075E AUT:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
7005S45J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
|
S76MSA90222AHD000SkyHigh Memory Limited |
IC FLASH MEM 1GBIT 130BALL |
|
|
520366230906Cypress Semiconductor |
IC MEM NOR SMD |
|
|
MT41K2G4RKB-107 C:NMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
|
AT45DB011D-DWFAdesto Technologies |
IC FLASH 1MBIT SPI 66MHZ DIE |
|
|
IS62WV5128EALL-55HLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP I |
|
|
MT53D1G64D8SQ-053 WT:E TRMicron Technology |
IC DRAM 64GBIT 1866MHZ 556VFBGA |
|
|
MT42L128M64D4LC-25 IT:AMicron Technology |
IC DRAM 8GBIT PARALLEL 240FBGA |
|
|
MTFC64GAJAECE-AATMicron Technology |
IC FLASH 512GBIT MMC 169LFBGA |
|
|
MT53B2G32D8QD-062 WT:D TRMicron Technology |
LPDDR4 64G 2GX32 FBGA 8DP |
|
|
MT52L256M64D2GN-107 WT ES:B TRMicron Technology |
IC DRAM 16GBIT 933MHZ 256FBGA |
