类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 32Kb (4K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | Die |
供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
MT29F4G08ABAEAH4-IT:EMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
![]() |
961.313Cypress Semiconductor |
IC GATE NOR |
![]() |
7007L25JI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
![]() |
MT40A1G16WBU-075E:BMicron Technology |
IC DRAM 16GBIT PARALLEL 96FBGA |
![]() |
MT25QL512ABA8ESF-0SIT TRMicron Technology |
IC FLASH 512MBIT SPI 16SOP2 |
![]() |
MT29TZZZ8D5BKFAH-125 W.95K TRMicron Technology |
MCP 8GX8/256X32 PLASTIC VFBGA 3. |
![]() |
M39L0R8090U3ZE6EMicron Technology |
IC FLSH RAM 256MBIT PAR 133VFBGA |
![]() |
MT47H64M16HR-3 L:H TRMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
![]() |
S29GL128S11TFA020Cypress Semiconductor |
IC FLASH 128MB FLASH NOR TSOP |
![]() |
MT35XL01GBBA2G12-0SIT TRMicron Technology |
IC FLSH 1GBIT XCCELA BUS 24TPBGA |
![]() |
IS42S83200J-7BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
![]() |
V29GL256P11TAI020Cypress Semiconductor |
IC GATE NOR |
![]() |
CG7787AATCypress Semiconductor |
IC CLOCK PROGRAMMABLE |