类型 | 描述 |
---|---|
系列: | * |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53B192M32D1Z0AMWC1Micron Technology |
IC DRAM 6GBIT 192MX32 |
|
MT53D1024M32D4NQ-062 WT ES:DMicron Technology |
IC DRAM 32GBIT 1600MHZ 200VFBGA |
|
N25Q008A11EF440EMicron Technology |
IC FLASH 8MBIT SPI 108MHZ UFDFPN |
|
DS2431P-045-A02+TMaxim Integrated |
IC EEPROM 1KB 1WIRE 6TSOC |
|
MT35XL256ABA2G12-0AATMicron Technology |
IC FLASH 256MBIT XCCELA 24TPBGA |
|
MTFC2GMUEA-WT TRMicron Technology |
IC FLASH 16GBIT MMC 153VFBGA |
|
MTFC4GACAJCN-1M WT-TRMicron Technology |
IC FLASH 32GBIT MMC 153VFBGA |
|
AT49BV162AT-70CURoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48CBGA |
|
MT29C8G96MAZBADJV-5 IT TRMicron Technology |
IC FLASH RAM 8GBIT PAR 168VFBGA |
|
24CS512T-E/MUYRoving Networks / Microchip Technology |
512K 3.4MHZ I2C SERIAL EEPROM |
|
IS65WV102416BLL-25MA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TFBGA |
|
IS61NVF25672-7.5B1I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 209LFBGA |
|
7025L55JIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |