类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8, 4M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 60 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (11x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53D256M64D4KA-046 XT:ES B TRMicron Technology |
IC DRAM 16GBIT 2133MHZ FBGA |
|
MT53B512M64D8HR-053 WT:BMicron Technology |
IC DRAM 32GBIT 1866MHZ |
|
DS1350BL-70Maxim Integrated |
IC NVSRAM 4MBIT PARALLEL 34LPM |
|
S70GL04GR00FHCAX0ECypress Semiconductor |
IC FLASH |
|
MT41J512M8THU-187E:AMicron Technology |
IC DRAM 4GBIT PARALLEL 533MHZ |
|
M50FLW080BN5TG TRMicron Technology |
IC FLASH 8MBIT PARALLEL 40TSOP |
|
7025L17PFIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
7134SA45JIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
MT53D512M64D4CR-053 WT:D TRMicron Technology |
IC DRAM 32GBIT 1866MHZ |
|
MT52L256M64D2LZ-107 XT:B TRMicron Technology |
IC DRAM 16GBIT 933MHZ 216FBGA |
|
PC28F00AG18FEMicron Technology |
IC FLASH 1GBIT PAR 64EASYBGA |
|
MT29F1G16ABBEAHC-IT:EMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
IS61NVP25672-250B1IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 209LFBGA |