类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 1Gb (128M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 63-VFBGA |
供应商设备包: | 63-VFBGA (9x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V3399S133BFGI8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 208CABGA |
|
MT53B512M64D4TX-053 WT ES:CMicron Technology |
IC DRAM 32GBIT 1866MHZ FBGA |
|
QMP29GL512R10TFIR10Cypress Semiconductor |
IC MEMORY NOR |
|
N25Q064A13ESF42EE01Micron Technology |
IC FLASH 64MBIT SPI 108MHZ 16SO |
|
CG8267AACypress Semiconductor |
IC SRAM |
|
MT53B1DATG-DCMicron Technology |
LPDDR4 8G |
|
SST26VF032BT-104V/SM70SVAORoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI/QUAD 8SOIJ |
|
593995-002-38Cypress Semiconductor |
IC FLASH |
|
CAT93C86ZD4I-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT SPI 3MHZ 8TDFN |
|
MT41K512M8RH-107 IT:EMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
IS46TR16512S2DL-125KBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96LWBGA |
|
71V321S55PFI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
CG8150AATCypress Semiconductor |
CLOCK DISTRIBUTION |