English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-CLCC |
| 供应商设备包: | 32-CLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT47H256M8EB-3:C TRMicron Technology |
IC DRAM 2GBIT PARALLEL 60FBGA |
|
|
DS28E01P-W0N+1TMaxim Integrated |
IC EEPROM |
|
|
7133LA45J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
|
MTFC64GAPALNA-AAT ES TRMicron Technology |
EMMC 512GBIT MMC5.1 J58X AAT |
|
|
AT49BV321-90TIRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 46UBGA |
|
|
MT46H32M32LFCG-6 IT:AMicron Technology |
IC DRAM 1GBIT PARALLEL 152VFBGA |
|
|
THGBMFG6C1LBAILToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 64G EMMC 153-FBGA |
|
|
M29W640GH70ZF6F TRMicron Technology |
IC FLASH 64MBIT PARALLEL 64TBGA |
|
|
M27C2001-10C6STMicroelectronics |
IC EPROM 2MBIT PARALLEL 32PLCC |
|
|
UPD48576218F1-E24-DW1-ARenesas Electronics America |
IC DRAM 576MBIT HSTL 144TFBGA |
|
|
S71WS256NC0BAWAP0FCypress Semiconductor |
IC GATE NOR |
|
|
24LC04B-I/W15KRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ DIE |
|
|
520366231286Cypress Semiconductor |
IC FLASH MEMORY NOR |
