类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 512Kb (64K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 100 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (11.35x13.89) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53D4G16D8AL-062 WT:EMicron Technology |
IC DRAM LPDDR4 SMD |
|
MT29F64G08CBCBBH1-10:B TRMicron Technology |
IC FLASH 64GBIT PARALLEL 100VBGA |
|
S98WS512P00FW0020Cypress Semiconductor |
IC GATE NOR |
|
MT41J256M16HA-125:EMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
EDF8132A3PD-GD-F-R TRMicron Technology |
IC DRAM 8GBIT PARALLEL 800MHZ |
|
S99JL064J55TFI000Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
S70GL04GS00FHCR20Cypress Semiconductor |
IC MEMORY FLASH NOR |
|
CAT25040VI-GT3DSanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT SPI 8SOIC |
|
MT53B512M64D4NZ-062 WT:D TRMicron Technology |
IC DRAM 32GBIT 1600MHZ |
|
CG8179AATCypress Semiconductor |
IC SRAM ASYNC |
|
M29W040B90K6Micron Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
7005S55JI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
MTFC32GAKAEJP-AITMicron Technology |
IC FLASH 256GBIT MMC 153VFBGA |