类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 256b (32 x 8) |
内存接口: | 1-Wire® |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 15 µs |
电压 - 电源: | - |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 4-UBGA, FCBGA |
供应商设备包: | 4-FlipChip (2.39x1.73) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F4G16ABAEAH4-IT:E TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
M58LR256KB70ZC5W TRMicron Technology |
IC FLASH 256MBIT PAR 79VFBGA |
|
MT29F4G08ABAFAH4-ITES:FMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
MT29VZZZ7D7HQKWL-062 W ES.G7AMicron Technology |
ALL IN ONE MCP 280G |
|
M29W320DB70N3EMicron Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
S99FL132KBIS0Cypress Semiconductor |
IC FLASH NOR |
|
70V9289L7PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
MT53D512M32D2NP-046 WT ES:D TRMicron Technology |
IC DRAM 16GBIT 2133MHZ 200WFBGA |
|
S25FL129P0XXEI909Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 104MHZ |
|
MT29TZZZ8D6DKEZB-107 W.9H6Micron Technology |
IC MEMORY FLASH FBGA |
|
MT28EW128ABA1LPN-0SITMicron Technology |
IC FLSH 128MBIT PARALLEL 56VFBGA |
|
70P255L90BYGIRenesas Electronics America |
IC SRAM 128KBIT PAR 100CABGA |
|
AT24C02C-STPD-TVAORoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C TSOT23-5 |