类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 8Gb (512M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7006S17JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
7024S17JIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
WBMISCCypress Semiconductor |
INTERFACE USB MISC |
|
MT53D512M64D4NZ-046 WT ES:EMicron Technology |
IC DRAM 32GBIT 2133MHZ 376WFBGA |
|
IS46TR16512AL-15HBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96LFBGA |
|
MT53B256M64D2NK-053 WT:C TRMicron Technology |
IC DRAM 16GBIT 1866MHZ FBGA |
|
MTFC128GAPALNA-AAT TRMicron Technology |
EMMC 1024G MMC5.1 J59X AAT |
|
EDF8132A3PD-GD-F-DMicron Technology |
IC DRAM 8GBIT PARALLEL 800MHZ |
|
MT29VZZZAD8DQKSM-053 W ES.9D8Micron Technology |
ALL IN ONE MCP 544G |
|
MT53B512M32D2GZ-062 WT:BMicron Technology |
IC DRAM 16GBIT 1600MHZ 200WFBGA |
|
S99GL128P0130Cypress Semiconductor |
IC FLASH |
|
A2C00045089 ACypress Semiconductor |
IC FLASH NOR |
|
CG8404AATCypress Semiconductor |
IC SRAM ASYNC 32SOJ |