类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 128Kb (16K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 17ns |
访问时间: | 17 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LQFP |
供应商设备包: | 64-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
40060586Cypress Semiconductor |
IC FLASH NOR |
![]() |
MT29F1G08ABADAH4:D TRMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
![]() |
AT49BV802D-70CURoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48CBGA |
![]() |
CAT25160VP2IGT3CSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KB SER SPI 8SOIC |
![]() |
DS1250YL-70Maxim Integrated |
IC NVSRAM 4MBIT PARALLEL 34LPM |
![]() |
MT25QL128ABB8ESF-0AUTMicron Technology |
IC FLASH 128MBIT SPI 16SOP2 |
![]() |
8 611 200 879Cypress Semiconductor |
IC MEMORY 1GB FLASH 3.0V 64FBGA |
![]() |
MT53B768M32D4NQ-053 WT:BMicron Technology |
IC DRAM 24GBIT 1866MHZ 200VFBGA |
![]() |
W98AD2KBJX6I TRWinbond Electronics Corporation |
1GB MSDR X32 166MHZ IND |
![]() |
MT53D512M64D4NW-053 WT:DMicron Technology |
IC DRAM 32GBIT 1866MHZ 432VFBGA |
![]() |
S70KL0BGT00FHCR00Cypress Semiconductor |
IC MEMORY FLASH SMD |
![]() |
MT29F128G8CFABBWP-12:B TRMicron Technology |
IC FLASH 128GBIT 48TSOP |
![]() |
IS45S32400F-7BA25ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |