类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Last Time Buy |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CG7733AATCypress Semiconductor |
IC EMI REDUCTION PREMIS SSCG |
|
MT53B192M32D1SG-062 WT ES:A TRMicron Technology |
IC DRAM 6GBIT 1600MHZ FBGA |
|
W978H6KBQX2IWinbond Electronics Corporation |
IC DRAM 256MBIT PAR 168WFBGA |
|
M50FLW080ANB5GMicron Technology |
IC FLASH 8MBIT PARALLEL 32TSOP |
|
IS43LD16640C-25BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 400MHZ |
|
MT53E256M16D1DS-046 AIT:BMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
M29F040B70N1Micron Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
MT42L64M64D2LL-18 WT:C TRMicron Technology |
IC DRAM 4GBIT PARALLEL 216FBGA |
|
MT41K256M16V80AWC1Micron Technology |
IC DRAM 4GBIT PARALLEL DIE |
|
7025L55JI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
MTFC128GAPALNS-AIT ESMicron Technology |
IC FLASH 1TB MMC 153TFBGA |
|
IS43R16320D-6BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
MT28GU512AAA2EGC-0SITMicron Technology |
IC FLASH 512MBIT PARALLEL 64TBGA |