English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 4Mb (512K x 8, 256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 90ns |
| 访问时间: | 90 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-SOIC (0.525", 13.34mm Width) |
| 供应商设备包: | 44-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S99GL064N0160Cypress Semiconductor |
IC FLASH |
|
|
IS42S32400F-6BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
|
70V07L25JI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
|
|
LE24LA162CB-TE-F-HSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT I2C 400KHZ |
|
|
NAND32GW3F2DDI6PMicron Technology |
SLC NAND |
|
|
70V05L25J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
|
MT46V128M4CY-5B:JMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
|
MT53D512M64D4SB-046 XT ES:E TRMicron Technology |
IC DRAM 32GBIT 2133MHZ FBGA |
|
|
MT29F128G8CFABBWP-12:BMicron Technology |
IC FLASH 128GBIT 48TSOP |
|
|
EDW4032CABG-50-N-F-DMicron Technology |
IC RAM 4GBIT PARALLEL 1.25GHZ |
|
|
47L04-I/S16KRoving Networks / Microchip Technology |
IC EERAM 4KBIT I2C 1MHZ DIE |
|
|
S99DL640DCypress Semiconductor |
IC MEMORY NOR |
|
|
MTFC4GLUDM-AIT TRMicron Technology |
IC FLASH 32GBIT MMC 169TFBGA |
