类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8, 8M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (11x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CG7750AATCypress Semiconductor |
IC PSOC1 |
|
M29W640GB6AZA6EMicron Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
7133SA55J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
7140SA100L48BRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48LCC |
|
S29GL128N90TFAR23Cypress Semiconductor |
IC FLASH MEMORY NOR PARALLEL |
|
MT42L64M32D1TK-18 AAT:C TRMicron Technology |
IC DRAM 2GBIT PARALLEL 134FBGA |
|
SFEM016GB1EM1TO-I-HG-111-STDSwissbit |
IC FLASH 128GBIT EMMC 153BGA |
|
CG8332AATCypress Semiconductor |
IC SRAM NONVOLATILE |
|
EDFP112A3PB-JD-F-D TRMicron Technology |
IC DRAM 24GBIT PARALLEL 933MHZ |
|
MT41K512M8DA-125:PMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
MT29F128G08AUCBBH3-12:BMicron Technology |
IC FLASH 128GBIT PAR 100LBGA |
|
16-4370-01SkyHigh Memory Limited |
IC GATE NAND |
|
MT46H256M32L4LE-48 WT:CMicron Technology |
IC DRAM 8GBIT PARALLEL 168TFBGA |