类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Mb (128K x 8) |
内存接口: | SPI |
时钟频率: | 20 MHz |
写周期时间 - 字,页: | 6ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | Die |
供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7130LA100J/2315Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
CG7825AATCypress Semiconductor |
IC SRAM ASYNC 85SOJ |
|
DSQ09G5-004-740Maxim Integrated |
IC MEMORY |
|
DS2704RG-CC1+T&RMaxim Integrated |
IC EEPROM |
|
N25Q00AA13G1241F TRMicron Technology |
IC FLSH 1GBIT SPI 108MHZ 24LPBGA |
|
MT53D512M64D4NZ-053 WT ES:DMicron Technology |
IC DRAM 32GBIT 1866MHZ 376WFBGA |
|
28329184 ACypress Semiconductor |
IC GATE NOR |
|
IS46TR85120AL-125KBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
MTFC32GJGEF-AIT ZMicron Technology |
IC FLASH 256GBIT MMC 169TFBGA |
|
MT29F512G08CUCABH3-12:AMicron Technology |
IC FLASH 512GBIT PAR 100LBGA |
|
N25Q256A11E1240EMicron Technology |
IC FLASH 256MBIT SPI 24TPBGA |
|
70V25L45JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
MT29F1G08ABADAH4-ITE:D TRMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |