English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3L |
| 内存大小: | 2Gb (512M x 4) |
| 内存接口: | Parallel |
| 时钟频率: | 800 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 13.75 ns |
| 电压 - 电源: | 1.283V ~ 1.45V |
| 工作温度: | 0°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 78-TFBGA |
| 供应商设备包: | 78-FBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
N25Q128A11ESECFEMicron Technology |
IC FLSH 128MBIT SPI 108MHZ 8SOP2 |
|
|
7052S35PQFRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 132PQFP |
|
|
AK93C65AVAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 4KBIT SPI 8TSSOP |
|
|
CG8622AMCypress Semiconductor |
IC PSOC4 |
|
|
M27C512-12C6STMicroelectronics |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
|
IS61NLF25672-7.5B1IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 209LFBGA |
|
|
CY14E064L-SZ35XCCypress Semiconductor |
IC NVSRAM 64KBIT PARALLEL 28SOIC |
|
|
MT29F6T08ETHBBM5-3RES:B TRMicron Technology |
IC FLASH 6TB PARALLEL 333MHZ |
|
|
EDW4032BABG-80-F-DMicron Technology |
IC RAM 4GBIT PAR 2GHZ 170FBGA |
|
|
93LC46B-I/WF15KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ DIE |
|
|
70P264L55BYGIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 81CABGA |
|
|
24AA01-I/S16KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ DIE |
|
|
S99-50258Cypress Semiconductor |
IC FLASH |
