类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (1K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | Die |
供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT42L128M32D1LF-25 WT:A TRMicron Technology |
IC DRAM 4GBIT PARALLEL 168FBGA |
|
MT29F256G08EBHAFB16A3WC1-MMicron Technology |
TLC 256G DIE 32GX8 |
|
MT49H8M36BM-25 IT:B TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
CG8703AFTCypress Semiconductor |
IC WI-FI/BLUETOOTH WICED |
|
MT41J512M8RH-093:EMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
JR28F064M29EWHAMicron Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
MT46V32M16TG-5B:JMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
M29F800DB70M6EMicron Technology |
IC FLASH 8MBIT PARALLEL 44SO |
|
MT53B512M64D4PV-062 WT ES:C TRMicron Technology |
IC DRAM 32GBIT 1600MHZ FBGA |
|
7005L20J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
MT29VZZZBD8HQOWL-053 W ES.G8DMicron Technology |
ALL IN ONE MCP 560G |
|
MT29VZZZ7C7DQKWL-062 W ES.97Y TRMicron Technology |
MLC EMMC/LPDDR3 280G |
|
AT49BV8192AT-11CIRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48CBGA |